History of Sony's Semiconductors - Timeline | Company | Sony Semiconductor Solutions Group

History of Sony's Semiconductor	History of SSS Group's sites
1953	Semiconductor project launched by Sony.
1954	Successfully prototyped Japan's first transistor.
1957	Invented the tunnel (Esaki) diode.
1958	Developed silicon power transistors.
1960	Atsugi plant construction completed by Sony.
1966	Commercialized the world's first monolithic IC for small radios.
1968	Developed the Sony Magnetodiode (SMD), a new semiconductor device.
1969	Sony Shiroishi Semiconductor established.
1970	Development of CCD image sensors begins.
1972	Succeeded in 8x8 pixels imaging
1973	Sony Kokubu Semiconductor established.
1977	Mass production begins on variable capacitance diodes (varicaps) for electronic UHF/VHF tuners. Commercialized highly reliable MNOS nonvolatile memory for TV tuners.
1978	Developed a 110,000-pixel CCD imager.
1980	Commercialized the first CCD image sensor. CCD color camera "XC1" adopted by jumbo jet. Developed the MCZ method of silicon crystal growth.
1982	Developed LSI circuits enabling production of consumer CD players.
1984	Commercialized two models of laser diodes produced using MOCVD, a world first.	Sony Oita established.
1986	Developed LSIs for digital audio tape recorders(DAT).	Sony Technical Soft established.
1987	Commercialized the world's first ultra-high-power laser with optical power output of 1 W.	Sony Nagasaki established.
1989	Commercialized a 1/2-inch, 250,000-pixel CCD image sensor for passport-sized Handycam. Successfully developed the world's first high-speed 4 Mb SRAM.
1990 Company name changed from Sony Technical Soft to Sony LSI Design.	Developed the world's first 1-inch, 2-megapixel FIT CCD sensor for HDTVs.
1991	Sony Kokubu Semiconductor renamed Sony Kokubu. Sony LSI Design Head office relocated to YBP East Town, 11F (until 2012).
1992	Developed a MUSE decoder LSI for HD broadcasts. Developed a 2/3-inch, 2-megapixel FIT CCD sensor for HDTVs. Commercialized a dedicated LSI for MiniDisc system.
1993	Developed the world's fastest 16 Mb SRAM. Commercialized the world's smallest color TFT LCD (0.55 inches, 113,000 dots) and a 0.7-inch color LCD with the world's highest pixel count (180,000 dots).
1994	Commercialized a 1/4-inch, 410,000-pixel color CCD image sensor.
1995	Commercialized an LSI conforming to the IEEE 1394 high-speed serial bus specification.	Sony LSI Design Head office relocated, Atsugi operations integrated (YBP research building).
1996	Established a low-temperature polysilicon TFT molding technique. Commercialized an LSI with embedded DRAM for MiniDisc applications. Development of CMOS Image Sensors begins.
1997	Developed a single-chip MPEG-2 video encoder LSI. Developed a 2.5-inch, 180,000-dot low-temperature polysilicon TFT LCD and a 1/3-inch, 680,000-pixel CCD (340,000 effective pixels).
1998	Commercialized the EXview HAD CCD, with high-sensitivity sensing also in the near-infrared spectrum.
1999	Developed a single-chip, two-wavelength laser diode for CD recording/playback and DVD playback.
2000 Commercialized the first CMOS image sensor "IMX001". Incorporated into AIBO.	Sony LSI Design Kyushu Branch opened. (Later designated as head office.)
2001	Developed two system LSIs with low power consumption for Network Handycam. Developed a high-temperature polysilicon TFT LCD panel (0.9-inch XGA, aperture ratio: 66.1%) using an ultra-wide-aperture process.	Three Kyushu sites (Sony Kokubu, Sony Oita, and Sony Nagasaki) integrated; Sony Semiconductor Kyushu established. Sites renamed Kokubu Technology Center , Oita Technology Center , and Nagasaki Technology Center, respectively. Sony Semiconductor Kyushu Kumamoto Technology Center established.
2002	Commercialized an ultra-small TV tuner module 1.5 ml in volume. Developed Virtual Mobile Engine reconfigurable circuit technology.	Sony LSI Design Atsugi office opened.
2003	Developed the world's first monolithic high-output two-wavelength laser diode. Developed the world's first single-chip LSI for GPS applications. Developed a four-color filter CCD that halves color reproduction errors, as well as a supporting image processor. Commercialized a 220 mW laser diode (highest level of output in the industry) enabling 16× DVD recording.
2004	Commercialized the first consumer 1080i-compatible HD CCD, supporting high-definition 1080i recording at a 16:9 aspect ratio. Developed a single-chip MPEG codec LSI (CXD4702GB) for high-quality recording/playback. Decision making of shifting focus from CCD to CMOS image sensors.	Sony Computer Entertainment fab integrated (incorporated into Nagasaki Technology Center).
2005	Commercialized the first CMOS sensor (1/3-inch type, 2.97 megapixels) for consumer HD digital video cameras. Commercialized a new SXRD: world's smallest (0.61-inch type) full HD reflective liquid crystal display device. Commercialized a compact digital tuner module enabling 1 seg digital terrestrial TV broadcast reception on mobile devices.
2006	Commercialized ClearVid CMOS sensors with a new structure enabling both high resolution and high sensitivity. Commercialized a 10.2-megapixel APS-C CCD image sensor for consumer digital still cameras. Cell Broadband Engine&trade mass production begins.	Sony Semiconductor Kyushu Kokubu Technology Center renamed Kagoshima Technology Center.
2007	Commercialized BrightEra 0.79-inch type transmissive microdisplays employing inorganic alignment film, with the world's highest brightness. Commercialized a high-power blue-violet laser diode for Blu-ray discs compatible with dual layer, 2×–4× recording. Commercialized an APS-C size CMOS image sensor for DSLRs offering an industry-leading resolution of 12.47 effective megapixels. Developed a 0.61-inch type full HD SXRD for projectors that supports high frame rates.
2008	Developed a 35mm full-frame CMOS image sensor for DSLRs offering a resolution of 24.81 effective megapixels and high-speed readout. Developed a back-illuminated CMOS image sensor with high image quality from low noise and nearly double the sensitivity of conventional sensors. Commercialized a CMOS image sensor for mobile phones with the industry's highest resolution of 12.25 effective megapixels, a world first.	Nagasaki Semiconductor Manufacturing Corporation jointly established by Toshiba Corporation, Sony Corporation and Sony Computer Entertainment Inc.(Current : Sony Interactive Entertainment Inc.).
2009	Commercialized World’s first back-illuminated CMOS image sensor. Installed into 2 digital high vision Handycams. Commercialized the world's first TransferJet-compatible LSIs. Commercialized the world's first demodulator LSI for DVB-T2 digital terrestrial broadcasts.
2010	Launched the industry's first high-power (400 mW class) blue-violet laser diode for BDXL™-compatible Blu-ray discs. Commercialized a back-illuminated CMOS image sensor for mobile phones with a resolution of 16.41 effective megapixels, a world first. Newly developed Super 35 mm-equivalent CMOS image sensor for digital cinema camcorder.
2011	Newly developed SXRD: world's smallest (0.74-inch type) 4K reflective liquid crystal display device.	Sony Shiroishi Semiconductor absorbed into Sony Semiconductor Kyushu. Company name changed to Sony Semiconductor. Sony Shiroishi Semiconductor renamed Shiroishi-Zao Technology Center.
2012	Developed next-generation Crystal LED Display technology, ideally suited to large screens and high picture quality. Developed stacked CMOS image sensors, which have enabled the ongoing evolution of cameras. These models introduced RGBW coding and HDR movie functions. Developed next-generation back-illuminated CMOS image sensors, again supporting ongoing evolution of cameras. Jointly developed low-power LSIs for wideband millimeter-wave wireless communication offering the world's fastest transfer rate of 6.3 Gb/s. Developed the world's first true-green laser diode with optical power output surpassing 100 mW at a wavelength of 530 nm.	Sony LSI Design Kyushu head office renamed as Fukuoka Branch. Higashiura Satellite established in the Higashiura Plant of Japan Display West in Chita, Aichi. Took over laminate substrate production of Sony Chemical ＆ Information Device after this business was split off. Neagari Site established.
2013	Commercialized mobile device global navigation satellite system (GNSS) receiver LSIs with the industry's lowest power consumption of 10 mW.	Head office relocated to Kikuchi-gun, Kikuyo-machi, Kumamoto Prefecture.
2014	Start of external sales of highly durable and heat-resistant SoRPlas™ flame-retardant recycled plastic with up to 99% recycled content. Commercialized the world's highest-sensitivity CMOS image sensor for automotive cameras. Commercialized the industry's first stacked CMOS image sensor with an image plane phase detection signal processing function for high-speed AF.	Neagari Site closed due to termination of laminate substrate business. Acquired the Tsuruoka Factory of Renesas Yamagata Semiconductor Co., Ltd., a wholly-owned subsidiary of Renesas Electronics Corporation, Sony Semiconductor Corporation's Yamagata Technology Center was established. Sony LSI Design Head office relocated (Atsugi).
2015	World’s first Cu-Cu (Copper-Copper) connection technology enters mass production.	Acquired Softkinetic Systems S.A., a Belgian company specializing in ToF sensor technology.
2016	Commercialized the industry's first stacked CMOS image sensor with built-in hybrid autofocus and 3-axis electronic image stabilization. Commercialized the industry's first ISDB-S3 compatible demodulator LSI and tuner modules for 4K/8K digital satellite broadcasts.	Acquired Altair Semiconductor, an Israeli company specializing in LTE modem chip technology. Sony semiconductor business spun off from Sony Corporation as a subsidiary, starting business as Sony Semiconductor Solutions. Company name changed to Sony Semiconductor Manufacturing. Oita Technology Center established in the city of Oita. Plant in Kunisaki renamed as Oita Technology Center Kunisaki Satellite.
2017	Developed the industry's first 3-layer stacked CMOS image sensor with DRAM for smartphones. Commercialized the industry's first CMOS image sensor for automotive cameras that both mitigates LED flicker and enables HDR shooting. Developed original low-power wide-area (LPWA) network technology. Commercialized a high-speed vision sensor enabling object detection and tracking at 1,000 fps. Developed a back-illuminated ToF image sensor with the industry's smallest pixel size. Commercialized the industry's highest resolution 7.42 effective megapixel stacked CMOS image sensor for automotive cameras. Commercialized a back-illuminated ToF sensor.
2018	Commercialized SPRESENSE™, a low-power board equipped with a smart-sensing processor for IoT applications. Commercialized a 0.5- type OLED microdisplay withtop-of-class UXGA resolution. Commercialized a new SXRD™: the world's smallest (0.37-type) full HD reflective liquid crystal display device, and a dedicated signal processing drive LSI. Commercialized a stacked CMOS image sensor for smartphones with the industry's highest 48 effective megapixels. Commercialized a CMOS image sensor for automotive cameras that mitigates LED flicker and enables HDR shooting with the industry's highest 5.4 effective megapixels.
2019	Commercialized a communication module compatible with proprietary ELTRES™ low-power wide area (LPWA) wireless communication standard. Commercialized two types of 4K-Resolution CMOS image sensors for security Cameras: world's Smallest type 1/2.8 and enhanced low-light performance type. Commercialized six types of stacked CMOS image sensors with global shutter function with back-illuminated pixel structure.	Acquired Mido Holdings, a network virtualization technology developer.
2020 Sony Semiconductor Solutions' Osaka Office opened. Company name changed from Altair Semiconductor to Sony Semiconductor Israel. Sony Semiconductor Energy Management established.	Newly developed stacked event-based vision sensor with the industry's smallest pixels and highest HDR performance by Sony and Prophesee Commercialized two models of SWIR image sensors for industrial equipment capable of capturing images across both the visible and invisible light spectrums, with the industry’s smallest 5μm pixel size Commercialized two models of world’s first intelligent vision sensors with AI processing functionality Commercialized high-precision GNSS receiver LSIs for IoT and wearable devices delivering the industry’s lowest power consumption for dual-band positioning operation
2021	Commercialized Large Format CMOS Image Sensor with Global Shutter Function and Industry’s Highest Effective Pixel Count of 127.68 Megapixels Commercialized 1/1.2-type 4K-Resolution CMOS Image Sensor for Security Cameras with Approximately 8 times the Dynamic Range of Conventional Model in a Single Exposure Commercialized a Stacked SPAD Depth Sensor for Automotive LiDAR Applications, an Industry First Commercialized Two Types of Stacked Event-Based Vision Sensors with the Industry’s Smallest 4.86μm Pixel Size for Detecting Subject Changes Only Commercialized UV Wavelength-Compatible CMOS Image Sensor Equipped with Global Shutter Function and Industry’s Highest Effective Pixel Count of Approx. 8.13 Megapixels Launched Edge AI Platform Service AITRIOS™ To Streamline the Development and Implementation of AI Camera-Driven Sensing Solutions Newly Developed World’s First Stacked CMOS Image Sensor Technology with 2-Layer Transistor Pixel
2022	Launched Fee-Based Service on Edge AI Sensing Platform AITRIOS™	Sony LSI Design absorbed into Sony Semiconductor Solutions for business integration
2023	Commercialized SPAD Depth Sensor for Smartphones with High-Accuracy, Low-Power Distance Measurement Performance, Powered by the Industry’s Highest Photon Detection Efficiency

1953

Semiconductor project
launched by Sony.

1954

Successfully prototyped
Japan's first transistor.

1957

Invented the tunnel
(Esaki) diode.

1958

Developed silicon power transistors.

1960

Atsugi plant construction completed by Sony.

1966

Commercialized the world's
first monolithic IC for small radios.

1968

Developed the
Sony Magnetodiode (SMD),
a new semiconductor device.

1969

Sony Shiroishi Semiconductor established.

1970

Development of CCD
image sensors begins.

1972

Succeeded in 8x8 pixels imaging

1973

Sony Kokubu Semiconductor established.

1977

Mass production begins on variable capacitance diodes
(varicaps) for electronic UHF/VHF tuners.

Commercialized highly reliable MNOS nonvolatile memory for TV tuners.

1978

Developed
a 110,000-pixel CCD imager.

1980

Commercialized the first CCD image sensor.
CCD color camera "XC1" adopted by jumbo jet.

Developed the MCZ method of silicon crystal growth.

1982

Developed LSI circuits enabling production of consumer CD players.

1984

Commercialized two models of laser diodes produced using MOCVD, a world first.

Sony Oita established.

1986

Developed LSIs for
digital audio tape recorders(DAT).

Sony Technical Soft established.

1987

Commercialized
the world's first ultra-high-power laser with optical power output of 1 W.

Sony Nagasaki established.

1989

Commercialized a 1/2-inch, 250,000-pixel CCD image sensor for passport-sized Handycam.

Successfully developed the world's first high-speed 4 Mb SRAM.

1990

Company name changed from Sony Technical Soft to Sony LSI Design.

Developed the world's first 1-inch, 2-megapixel FIT CCD sensor for HDTVs.

1991

Sony Kokubu Semiconductor renamed Sony Kokubu.

Sony LSI Design Head office relocated to YBP East Town, 11F (until 2012).

1992

Developed a MUSE decoder LSI for HD broadcasts.

Developed a 2/3-inch, 2-megapixel FIT CCD sensor for HDTVs.

Commercialized a dedicated LSI for MiniDisc system.

1993

Developed
the world's fastest 16 Mb SRAM.

Commercialized the world's smallest color TFT LCD (0.55 inches, 113,000 dots) and a 0.7-inch color LCD with the world's highest pixel count (180,000 dots).

1994

Commercialized a 1/4-inch,
410,000-pixel color CCD image sensor.

1995

Commercialized
an LSI conforming to the IEEE 1394 high-speed serial bus specification.

Sony LSI Design Head office relocated, Atsugi operations integrated (YBP research building).

1996

Established a low-temperature polysilicon TFT molding technique.

Commercialized an LSI with embedded DRAM for MiniDisc applications.

Development of CMOS Image Sensors begins.

1997

Developed a single-chip
MPEG-2 video encoder LSI.

Developed a 2.5-inch, 180,000-dot low-temperature polysilicon TFT LCD and a 1/3-inch, 680,000-pixel CCD (340,000 effective pixels).

1998

Commercialized
the EXview HAD CCD,
with high-sensitivity sensing also in the near-infrared spectrum.

1999

Developed a single-chip,
two-wavelength laser diode for CD recording/playback and DVD playback.

2000

Commercialized the first CMOS image sensor "IMX001". Incorporated into AIBO.

Sony LSI Design Kyushu Branch opened. (Later designated as head office.)

2001

Developed
two system LSIs
with low power consumption for Network Handycam.

Developed a high-temperature polysilicon TFT LCD panel (0.9-inch XGA, aperture ratio: 66.1%) using an ultra-wide-aperture process.

Three Kyushu sites (Sony Kokubu, Sony Oita, and Sony Nagasaki) integrated; Sony Semiconductor Kyushu established. Sites renamed Kokubu Technology Center , Oita Technology Center , and Nagasaki Technology Center, respectively.

Sony Semiconductor Kyushu Kumamoto Technology Center established.

2002

Commercialized
an ultra-small TV tuner
module 1.5 ml in volume.

Developed Virtual Mobile Engine reconfigurable circuit technology.

Sony LSI Design Atsugi office opened.

2003

Developed
the world's first monolithic
high-output two-wavelength laser diode.

Developed the world's first single-chip LSI for GPS applications.

Developed a four-color filter CCD that halves color reproduction errors, as well as a supporting image processor.

Commercialized a 220 mW laser diode (highest level of output in the industry) enabling 16× DVD recording.

2004

Commercialized the first consumer 1080i-compatible HD CCD,
supporting high-definition 1080i recording at a 16:9 aspect ratio.

Developed a single-chip MPEG codec LSI (CXD4702GB) for high-quality recording/playback.

Decision making of shifting focus from CCD to CMOS image sensors.

Sony Computer Entertainment fab integrated (incorporated into Nagasaki Technology Center).

2005

Commercialized the first CMOS sensor (1/3-inch type, 2.97 megapixels) for consumer HD digital video cameras.

Commercialized a new SXRD: world's smallest (0.61-inch type) full HD reflective liquid crystal display device.

Commercialized a compact digital tuner module enabling 1 seg digital terrestrial TV broadcast reception on mobile devices.

2006

Commercialized ClearVid CMOS sensors with a new
structure enabling both high resolution
and high sensitivity.

Commercialized a 10.2-megapixel APS-C CCD image sensor for consumer digital still cameras.

Cell Broadband Engine&trade mass production begins.

Sony Semiconductor Kyushu Kokubu Technology Center renamed Kagoshima Technology Center.

2007

Commercialized BrightEra 0.79-inch type transmissive microdisplays employing inorganic alignment film, with the world's highest brightness.

Commercialized a high-power blue-violet laser diode for Blu-ray discs compatible with dual layer, 2×–4× recording.

Commercialized an APS-C size CMOS image sensor for DSLRs offering an industry-leading resolution of 12.47 effective megapixels.

Developed a 0.61-inch type full HD SXRD for projectors that supports high frame rates.

2008

Developed a 35mm full-frame CMOS image sensor for DSLRs
offering a resolution of 24.81 effective megapixels and high-speed readout.

Developed a back-illuminated CMOS image sensor with high image quality from low noise and nearly double the sensitivity of conventional sensors.

Commercialized a CMOS image sensor for mobile phones with the industry's highest resolution of 12.25 effective megapixels, a world first.

Nagasaki Semiconductor Manufacturing Corporation jointly established by Toshiba Corporation, Sony Corporation and Sony Computer Entertainment Inc.(Current : Sony Interactive Entertainment Inc.).

2009

Commercialized World’s first back-illuminated CMOS
image sensor. Installed into 2 digital high vision Handycams.

Commercialized the world's first TransferJet-compatible LSIs.

Commercialized the world's first demodulator LSI for DVB-T2 digital terrestrial broadcasts.

2010

Launched the industry's first high-power (400 mW class) blue-violet laser diode for
BDXL™-compatible Blu-ray discs.

Commercialized a back-illuminated CMOS image sensor for mobile phones with a resolution of 16.41 effective megapixels, a world first.

Newly developed Super 35 mm-equivalent CMOS image sensor for digital cinema camcorder.

2011

Newly developed SXRD:
world's smallest (0.74-inch type)
4K reflective liquid crystal display device.

Sony Shiroishi Semiconductor absorbed into Sony Semiconductor Kyushu. Company name changed to Sony Semiconductor. Sony Shiroishi Semiconductor renamed Shiroishi-Zao Technology Center.

2012

Developed next-generation Crystal LED Display technology,
ideally suited to large screens and high picture quality.

Developed stacked CMOS image sensors, which have enabled the ongoing evolution of cameras. These models introduced RGBW coding and HDR movie functions.

Developed next-generation back-illuminated CMOS image sensors, again supporting ongoing evolution of cameras.

Jointly developed low-power LSIs for wideband millimeter-wave wireless communication offering the world's fastest transfer rate of 6.3 Gb/s.

Developed the world's first true-green laser diode with optical power output surpassing 100 mW at a wavelength of 530 nm.

Sony LSI Design Kyushu head office renamed as Fukuoka Branch.

Higashiura Satellite established in the Higashiura Plant of Japan Display West in Chita, Aichi.

Took over laminate substrate production of Sony Chemical ＆ Information Device after this business was split off. Neagari Site established.

2013

Commercialized mobile device global navigation satellite system (GNSS)
receiver LSIs with the industry's lowest power consumption of 10 mW.

Head office relocated to Kikuchi-gun, Kikuyo-machi, Kumamoto Prefecture.

2014

Start of external sales of highly durable and
heat-resistant SoRPlas™ flame-retardant recycled plastic
with up to 99% recycled content.

Commercialized the world's highest-sensitivity CMOS image sensor for automotive cameras.

Commercialized the industry's first stacked CMOS image sensor with an image plane phase detection signal processing function for high-speed AF.

Neagari Site closed due to termination of laminate substrate business.

Acquired the Tsuruoka Factory of Renesas Yamagata Semiconductor Co., Ltd., a wholly-owned subsidiary of Renesas Electronics Corporation, Sony Semiconductor Corporation's Yamagata Technology Center was established.

Sony LSI Design Head office relocated (Atsugi).

2015

World’s first Cu-Cu (Copper-Copper)
connection technology enters mass production.

Acquired Softkinetic Systems S.A., a Belgian company specializing in ToF sensor technology.

2016

Commercialized the industry's first stacked CMOS image sensor
with built-in hybrid autofocus and
3-axis electronic image stabilization.

Commercialized the industry's first ISDB-S3 compatible demodulator LSI and tuner modules for 4K/8K digital satellite broadcasts.

Acquired Altair Semiconductor, an Israeli company specializing in LTE modem chip technology.

Sony semiconductor business spun off from Sony Corporation as a subsidiary, starting business as Sony Semiconductor Solutions.

Company name changed to Sony Semiconductor Manufacturing. Oita Technology Center established in the city of Oita. Plant in Kunisaki renamed as Oita Technology Center Kunisaki Satellite.

2017

Developed the industry's first 3-layer stacked CMOS image sensor
with DRAM for smartphones.

Commercialized the industry's first CMOS image sensor for automotive cameras that both mitigates LED flicker and enables HDR shooting.

Developed original low-power wide-area (LPWA) network technology.

Commercialized a high-speed vision sensor enabling object detection and tracking at 1,000 fps.

Developed a back-illuminated ToF image sensor with the industry's smallest pixel size.

Commercialized the industry's highest resolution 7.42 effective megapixel stacked CMOS image sensor for automotive cameras.

Commercialized a back-illuminated ToF sensor.

2018

Commercialized SPRESENSE™,
a low-power board equipped with
a smart-sensing processor for IoT applications.

Commercialized a 0.5- type OLED microdisplay withtop-of-class UXGA resolution.

Commercialized a new SXRD™: the world's smallest (0.37-type) full HD reflective liquid crystal display device, and a dedicated signal processing drive LSI.

Commercialized a stacked CMOS image sensor for smartphones with the industry's highest 48 effective megapixels.

Commercialized a CMOS image sensor for automotive cameras that mitigates LED flicker and enables HDR shooting with the industry's highest 5.4 effective megapixels.

2019

Commercialized a communication module compatible with proprietary ELTRES™
low-power wide area (LPWA) wireless communication standard.

Commercialized two types of 4K-Resolution CMOS image sensors for security Cameras: world's Smallest type 1/2.8 and enhanced low-light performance type.

Commercialized six types of stacked CMOS image sensors with global shutter function with back-illuminated pixel structure.

Acquired Mido Holdings, a network virtualization technology developer.

2020

Sony Semiconductor Solutions' Osaka Office opened.

Company name changed from Altair Semiconductor to Sony Semiconductor Israel.

Sony Semiconductor Energy Management established.

Newly developed stacked event-based vision sensor with the industry's smallest pixels and highest HDR performance by Sony and Prophesee

Commercialized two models of SWIR image sensors for industrial equipment capable of capturing images across both the visible and invisible light spectrums, with the industry’s smallest 5μm pixel size

Commercialized two models of world’s first intelligent vision sensors with AI processing functionality

Commercialized high-precision GNSS receiver LSIs for IoT and wearable devices delivering the industry’s lowest power consumption for dual-band positioning operation

2021

Commercialized Large Format CMOS Image Sensor with Global Shutter Function and
Industry’s Highest Effective Pixel
Count of 127.68 Megapixels

Commercialized 1/1.2-type 4K-Resolution CMOS Image Sensor for Security Cameras with Approximately 8 times the Dynamic Range of Conventional Model in a Single Exposure

Commercialized a Stacked SPAD Depth Sensor for Automotive LiDAR Applications, an Industry First

Commercialized Two Types of Stacked Event-Based Vision Sensors with the Industry’s Smallest 4.86μm Pixel Size for Detecting Subject Changes Only

Commercialized UV Wavelength-Compatible CMOS Image Sensor Equipped with Global Shutter Function and Industry’s Highest Effective Pixel Count of Approx. 8.13 Megapixels

Launched Edge AI Platform Service AITRIOS™
To Streamline the Development and Implementation of AI Camera-Driven Sensing Solutions

Newly Developed World’s First Stacked CMOS Image Sensor Technology with 2-Layer Transistor Pixel

2022

Launched Fee-Based Service on
Edge AI Sensing Platform AITRIOS™

Sony LSI Design absorbed into Sony Semiconductor Solutions for business integration

2023

Commercialized SPAD Depth Sensor for Smartphones with High-Accuracy, Low-Power Distance Measurement Performance, Powered by the Industry’s Highest Photon Detection Efficiency

History of Sony's Semiconductors - Timeline

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